DC and RF Characteristics of Advanced MIM Capacitors for MMIC’s Using Ultra-Thin Remote-PECVD Si N Dielectric Layers

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (RF) measurements was as high as 2900 pF/mm. Tenfold reduction of MIM capacitor size was successfully performed compared with conventional MIM capacitor with 2000-Å PECVD Si3N4 dielectric layer. Despite ultra-thin dielectric films of 200-Å thickness, the fabricated MIM capacitors showed good RF performance and high yield.